Cypress Infineon 256Kbit FRAM NVRAM, SPI, SOIC
Cypress Infineon 256Kbit SPI FRAM NVRAM in 8-pin SOIC. Offers high endurance, bus-speed writes, and wide voltage range for embedded designs.
The Cypress Infineon 256Kbit FRAM NVRAM is an advanced Ferroelectric Random Access Memory device, packaged in an 8-pin SOIC format. With a memory configuration of 32K x 8bit, this non-volatile memory reads and writes similarly to RAM, providing reliable data retention for 151 years. It eliminates the complexities, overhead, and system-level reliability problems often caused by serial flash, EEPROM, and other non-volatile memories.
Unlike serial flash and EEPROM, this FRAM performs write operations at bus speed without incurring write delays. Data is written to the memory array immediately after each byte is successfully transferred, allowing the next bus cycle to commence without the need for data polling. Additionally, the device offers substantial write endurance compared to other non-volatile memories, serving as a direct hardware drop-in replacement for users of serial EEPROM or flash.
Key Features
- High endurance: 100 trillion (10^14) read/writes
- Automotive grade: AEC-Q100 qualified
- Advanced high-reliability ferroelectric process
- Up to 20MHz frequency
- Sophisticated write protection scheme
- Low power consumption with an active current of 250μA at 1MHz and a typical standby current of 15μA
- Wide operating voltage range: 2.7V to 5.5V
- Operating temperature range: -40°C to 85°C
- Dimensions: 43mm x 33mm x 15mm
- Weight: 0.816 grams
- For embedded design development
- As a hardware drop-in replacement for serial EEPROM or flash
- Memory Type: FRAM
- Memory Size: 256Kbit
- Memory Configuration: 32K x 8bit
- IC Interface Type: SPI
- Case Style: SOIC
- No. of Pins: 8
- Supply Voltage Min: 2.7V
- Supply Voltage Max: 5.5V
- Operating Temperature Min: -40°C
- Operating Temperature Max: 85°C
- Endurance: 100 trillion (10^14) read/writes
- Qualification: AEC-Q100
- Frequency: Up to 20MHz
- Active Current: 250μA at 1MHz
- Standby Current: 15μA
- MSL: MSL 3 - 168 hours
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 0.816 grams
- NVRAM Memory Configuration: 32K x 8bit
- Memory Case Style: SOIC
- of Pins: 8Pins
- SVHC: No SVHC (17-Jan-2023)
Documents
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