BD680 Darlington Transistor, PNP, 80V 4A, TO126 Case
STMICROELECTRONICS BD680 PNP Darlington transistor, 80V 4A 40W, for industrial power management and amplification.
The BD680 is a robust PNP complementary power Darlington Transistor designed for demanding industrial and power management applications. Manufactured using Planar Base Island technology, it delivers reliable performance and high power density in a compact package.
This component features a monolithic Darlington configuration for high current gain and includes an integrated anti-parallel collector-emitter diode, simplifying circuit design and enhancing functionality. Its design prioritises stability with good hFE linearity and a high transition frequency (fT), making it suitable for amplification and switching tasks where signal integrity and speed are critical.
With a collector-emitter voltage (V(br)ceo) rating of 80V and a continuous DC collector current of 4A, the BD680 can handle significant power levels. Its power dissipation capability of 40W ensures reliable operation under load, supported by a maximum operating temperature of 150°C.
Housed in a through-hole mountable SOT-32 (TO126) case, it offers easy integration onto printed circuit boards for prototyping and production. The robust construction and proven technology make this transistor a dependable choice for engineers and technicians.
Key Specifications
- Transistor Type: PNP Darlington
- Technology: Planar Base Island
- Configuration: Monolithic Darlington with integrated diode
- Collector-Emitter Voltage (V(br)ceo): 80V
- DC Collector Current: 4A
- Power Dissipation: 40W
- DC Current Gain (hFE): 750
- Mounting Type: Through Hole
- Case Style: SOT-32 (TO126)
- Pin Count: 3 Pins
- Operating Temperature Max: 150°C
- Industrial electronics
- Power management systems
- Amplifier circuits
- Switching power supplies
- Transistor Polarity: PNP
- Configuration: Darlington
- Technology: Planar Base Island
- Special Feature: Integrated anti-parallel collector-emitter diode
- Collector Emitter Voltage V(br)ceo: 80V
- Power Dissipation Pd: 40W
- DC Collector Current: 4A
- DC Current Gain hFE: 750
- Transistor Case: SOT-32 (TO126)
- Transistor Mounting: Through Hole
- No. of Pins: 3 Pins
- Operating Temperature Max: 150°C
- Dimensions (HxWxD): 43mm x 33mm x 15mm
- Weight: 0.64 grams
- High fT frequency Transistor Polarity: PNP
- RF Transistor Case: SOT-32
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Documents
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